III-V products
For RF & microwave components
Features
Generic pHEMT (AlGaAs, AlAs, InGaAs)
Epistructure for E/D (Enhancement/Depletion) InGaP pHEMT
P-type doping capability for PiN-pHEMT technology
High-Low and High-Low-High MESFET
MHEMT and pMHEMT (38% to 70%)
Benefits
Epistructure
Epistructure customization for MESFET, HEMT, pHEMT, MHEMT, pMHEMT, diode
Low/High temperature MBE process
Phosphorus capability for InGaP layer
P-type doping capability
Manufacturing
Engineering service for better performance, better yields (1)
SPC controls (2)
Excellent uniformity ( < 2% wafer-to-wafer)
Characterization
Contactless resistivity, mobility & sheet carrier concentration
XRD, PL, Hall characterization
Large electrical device characterization (buffer isolation)
Device applications:
Switch
Power and low-noise amplifiers
Hall sensor
Optical modulator
System applications:
Wireless: cell phone (3)
Military-Defense: satellite, radar (4)
Automotive (5)
For discrete power devices, RF & microwave components
Features
GaN HEMT structure dedicated to very high power density applications from DC up to microwave
Low-noise application (Noise Figure: 0.75dB at 10GHz)
Excellent buffer isolation (typically > 600V with 1.8µm GaN buffer)
Benefits
Epistructure (1)
SP1: standard structure with a sheet resistivity: 420 Ohm.sq; mobility: 1500cm2/V/s
SP2: greater mobility (+30% compared with SP1)
SP3: greater sheet carrier density (+20% compared with SP1) (2)
SP4: less gate leakage current (10 times less than standard SP1)
PSP: Higher buffer breakdown voltage, better electron confinement
Substrate compatibility with
SiC substrate: 2”; 3” diameter
Silicon HR [111]: 2”; 3”; 100mm diameter, possible scalability to 150mm
SopSiCTM substrate: 2”; 3”; 100mm diameter, possible scalability to 150mm
Manufacturing
GaN buffer up to 3µm thick
High electrical isolation: iron-free process
Very low bow ( < 30µm)
Crack-free material, low dislocation density (typically 3E9cm-2)
Capability to dope N+ with Silicon doping up to 5E17cm-3
Device applications:
DC power devices: rectifier, switch…
Power and low-noise amplifiers
C, K, Ku, X and Q band amplifiers
System applications:
Wireless: WiMAX base station (3)
Military-Defense: satellite, radar (4)
Consumer: power supply for appliances and computers (5)
Automotive: power train (6)
For power management ICs, RF components and discrete power devices
SopSiC™: Silicon layer transferred onto a polycrystalline Silicon Carbide substrate using the Smart Cut™ technology, which is compatible with current GaN HEMT manufacturing.
Features
Combines the advantages of SOI with the thermal properties of Silicon Carbide
GaN growth compatibility on silicon seed layer
Scalability to 300mm
Benefits
Substrate properties
Excellent thermal properties: 300W/m K (2x improvement vs. bulk silicon) (1)
Low RF leakage over wide temperature range (2)
Compatibility with both silicon and GaN epitaxies (3)
Manufacturing
A proven, robust and high-volume process
Device applications:
Discrete RF power
RF MIMICs
High power amplifier
Discrete power device (Schottky diode, switch…)
Power CMOS
System applications:
Military-Defense: X and S band radar (4)
Wireless: WiMAX base station (5)
Industrial: power mangement, medical instrumentation (6)
