SOI products
Unibond™, Unibond™ + Epi, Customized BSOI
For a broad range of applications
Features
Thick SOI wafers are manufactured using one of three options, depending on the top silicon thickness requirements. (1)
Benefits
Power management, analog, mixed signal, RF, discrete power devices
Complete transistor isolation via trench and buried oxide:
• Lower digital signal disturbances
• Better analog signal linearity, higher signal-to-noise ratio
• No latch-up
• Reduced parasitic substrate current
• Higher reliability
Wider operating temperature range
Lower electro-magnetic field susceptibility
Option of high resistivity substrate for RF and System-on-Chip (SoC):
• Better passive component performance
• Lower substrate losses
• Lower crosstalk
Imaging
Enables back side illuminated CMOS and CCD image sensor through optimized and simplified circuit transfer:
• Buried oxide used as etch-stop layer
• State-of-the-art silicon uniformity, low back surface defectivity
M(O)EMS
Easy structure patterning due to excellent selective etching of Silicon & SiO2
Silicon Photonics
Higher on-chip integration with optics and electronics
Excellent Si/SiO2 refractive index contrast for light confinement
Light processing enabler: modulators, switches, filters…
End-applications:
Automotive
Consumer
Wireless
Ultra-Thin Unibond™ XUT, XUT+, UTSOI wafers
For CMOS logic, analog, RF and memory ICs
Features
All Thin SOI products created using Smart Cut™ technology
Benefits
CMOS logic & analog
Partially depleted mode for high performance CMOS:
• Reduced source & drain parasitic capacitance compared to bulk
• Boost effect from floating body in digital operation: improved switching speed/power consumption trade-off
• Well isolation suppression and free transistor placement: increased transistor integration density & reduced die size
• Improved soft error rate immunity
Fully depleted mode for digital functions:
• Substantial reduction of source & drain parasitic capacitance compared to bulk: improved transistor switching speed
• Ideal I/V transistor characteristics due to low parasitics: optimized power consumption in stand-by & dynamic operation modes
RF components
Better active & passive components performance with higher Ft, Fmax and Q factor
Lower substrate losses: better RF signal & reduced power consumption at high frequency
Lower crosstalk: better System-on-Chip (SoC) integration
Memory
Enables Floating body cell memory design: density improvement vs. embedded SRAM & DRAM
End-applications:
Computer
Consumer
Wireless
