Tracit services
Layer transfer services for embedded functions in customized substrates
For a broad range of applications
Embedding a customized layer onto an application specific substrate (1)
Technical capabilities
Based on core Tracit Technologies: direct bonding and thinning techniques
Partially processed incoming wafers (implanted, patterned oxide)
150 and 200mm compatible (scalability to 300mm)
High and low temperature bonding process capability
Compatible with different patterns (from 10µm up to a few mm)
Bonding available onto Si, SiO2, Si3N4, fused silica, glass, polycrystalline silicon carbide…
Dedicated line for wafer bonding treatment
• Front-end of the line
Benefits
Simplifies device design and manufacturing
Hybrid function capability
• Patterned SOI (2), compatible with thick & thin SOI substrates
Hybrid technology integration
• Open new System-On-Chip (SoC) applications
Device type:
Analog & mixed signal
RF components
Power management IC
Discrete power device
M(O)EMS
End-applications:
Wireless
Medical
Automotive
Contact: sales@tracit-tech.com
Customized BSOI, Multi SOI, Anti-sticking BSOI, D-BSOI™ and Si-Si wafers
For a broad range of applications
Features
Based on core Tracit Technologies: direct bonding and thinning techniques
150 and 200mm capability (scalability to 300mm)
Products / Benefits
Customized BSOI wafer
See Thick SOI wafer specsheet
Multi SOI wafer (1)
Integration of multilayer devices
Anti-sticking BSOI wafer (2)
Prevent sticking effect of membrane obtained after buried oxide release on SOI wafer
Increase yield for membrane-based MEMS
D-BSOI™ wafer (3)
Debondable silicon membrane bonded onto a temporary support compatible with microelectronics process
Enables processing of thin substrates or membranes
Si-Si wafer
Based on direct silicon bonding (ohmic contact)
Combination of highly & low doped layers with sharp doping interface
Combination of different crystalline orientations
Device type:
Analog & mixed signal
Discrete power devices
M(O)EMS (accelerometer, membrane…)
Silicon photonics
End-applications:
Automotive
Wireless
Communication
Contact: sales@tracit-tech.com
For CMOS logic, RF components, image sensors, memories and solid state lighting
Transferring a circuit layer from a processed wafer onto another substrate decouples the exigencies of circuit fabrication from the needs of the final application
Technical capabilities
Based on core Tracit Technologies: direct bonding and thinning techniques
Fully or partially processed incoming wafers
150 and 200mm capability (scalability to 300mm)
Low temperature bonding process capability to maintain IC functions
Single & double layer transfer process available (1)
Bonding available on Si, SiO2, Si3N4, fused silica, glass, polycrystalline silicon carbide…
Dedicated line for wafer bonding treatment
• Metallization compatible
Benefits
Enhanced circuit performance thanks to new support
High insulation for power & RF
Optical transparency (IR visible) (2)
Backside access of the device layer
New circuit architecture (for example: backside illumination structure)
3D IC
High density integration
Hetero structure integration
Device type:
CMOS Logic
RF components
Image sensors
Memories: NV, DRAM, SRAM
Solid state lighting
End-applications:
Consumer
Automotive
Wireless
Contact: sales@tracit-tech.com