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FD-SOI exhibits outstanding reliability figures for automotive and aerospace applications, up to 100X improvement in soft error rates.
FD-SOI exhibits outstanding reliability figures for automotive and aerospace applications, up to 100X improvement in soft error rates.
FD-SOI outperforms Bulk and Finfet technologies in terms of energy efficiency at a given technology node.
Using FD-SOI, the power amplifier (PA) for automotive radar exhibits stable power output with better efficiency over the full temperature range (-40°C to 150°C ).
FD-SOI substrate relies on two primary innovations:
The ultra-thin film FD-SOI architecture enables transistors to operate in fully depleted mode, offering an “electrical Shrink-on-Chip” solution while simplifying the manufacturing process.
Soitec FD-SOI wafers characteristics are:
FD-SOI technology provides the optimal balance between digital performance, mixed-signal compatibility, power consumption and cost.
Soitec produces FD-SOI wafers for technology nodes from 65nm down to 12nm, enabling ultra-low-power features, unique cost/performance tradeoff, high-reliability and high-performance-mixed signal integration for a wide range of applications.