Connect RFeSI™ SOI

Soitec RF enhanced Signal Integrity substrates for LTE and LTE-Advanced front-end module ICs.

Soitec’s RFeSI™ wafers incorporate an innovative material (a trap-rich layer) between the high-resistivity handle wafer and the buried oxide (BOX), which significantly improves the RF performance of the finished ICs manufactured on these wafers.

Soitec RFeSI™ SOI wafers bring added performance compared to HR-SOI:

Better linearity
Lower RF losses
Lower crosstalk
Improved quality factors for passives
Smaller die size
Higher thermal conductivity

SEE SOITEC WHITE PAPER ON RF-SOI SUBSTRATES

On RFeSI™ products, Soitec measures the harmonic quality factor (HQF), a parameter that correlates with the second harmonic attenuation (HD2) of a coplanar waveguide.

This helps to ensure the substrate’s RF performance.

SEE SOITEC WHITE PAPER ON RF-SOI WAFER CHARACTERIZATION

Soitec offers a range of RFeSI™ products to match your need.
Today we have released RFeSI80 and RFeSI90 products.

Typical Soitec RFeSI™ wafers include:

Compatibility with 4G-LTE/5G and Wi-Fi specifications
Broad range of top silicon layer thicknesses produced using Soitec’s Smart Cut™ technology