Connect RFeSI™ SOI
![R Fe Si siteweb EN](https://d2za3aw7vtguly.cloudfront.net/production/images/corporateContentPages/4703/RFeSi-siteweb-EN.png)
Soitec’s RFeSI™ wafers incorporate an innovative material (a trap-rich layer) between the high-resistivity handle wafer and the buried oxide (BOX), which significantly improves the RF performance of the finished ICs manufactured on these wafers.
Soitec RFeSI™ SOI wafers bring added performance compared to HR-SOI:
- Better linearity
- Lower RF losses
- Lower crosstalk
- Improved quality factors for passives
- Smaller die size
- Higher thermal conductivity
![Soitec R Fe SOI 1](https://d2za3aw7vtguly.cloudfront.net/production/images/corporateContentPages/3736/soitec_RFeSOI-1.jpg)
On RFeSI™ products, Soitec measures the harmonic quality factor (HQF), a parameter that correlates with the second harmonic attenuation (HD2) of a coplanar waveguide.
This helps to ensure the substrate’s RF performance.
![Image 13](https://d2za3aw7vtguly.cloudfront.net/production/images/corporateContentPages/264846/image-13.png)
Soitec offers a range of RFeSI™ products to match your need.
Today we have released RFeSI80 and RFeSI90 products.
Typical Soitec RFeSI™ wafers include:
Compatibility with 4G-LTE/5G and Wi-Fi specifications
Broad range of top silicon layer thicknesses produced using Soitec’s Smart Cut™ technology