Connect iFEM-SOI

As the number of smart connected things multiplies, providing robust and reliable wireless connections at the right cost is more than ever of actuality.

Leveraging on its rich expertise and long experience on engineered RF-SOI substrates, Soitec introduces iFEM-SOI 300mm technology

The well known linearity and integration advantages of RF trap rich SOI allow system architects to use iFEM-SOI to integrate the full RFFE – switch, Low Noise Amplifier (LNA), Power Amplifier (PA) and support functions (memory, biasing, etc) simplifying design complexity and improving time-to-market in challenging applications as Wi-Fi’s RFFE for mobile, nomad or fixed devices.

SEE SOITEC WHITE PAPER ON RF-SOI WAFER CHARACTERIZATION