Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor's Smallcap 600 and Russell 3000 Index company, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets, and Soitec (Euronext Paris), a leader in designing and manufacturing innovative semiconductor materials, shared the validation of Soitec’s 150mm SmartSiCTM substrates for Diodes’ SiC Schottky 650V diodes, in addition to the improvements provided to the  on-resistance of 1200V VDMOSFET devices as presented at ICSCRM 2025.

The design-of-experiments clearly demonstrated the advantages of SmartSiCTM engineered wafers to lower the on-resistance of Silicon Carbide (SiC) Power Devices. The packaged parts from the assembled engineered wafers have now passed the initial robustness verification, allowing the SiC foundry Clas-SiC Wafer Fab Limited to offer SmartSiC™ as a substrate option in their 1200V MOSFET Process Design Kit.

“Our cutting-edge SmartSiC™ technology is an innovative technology for the increasing market demand for SiC Power Devices enabling systems with better efficiency and higher power density” said Christophe Maleville, CTO of Soitec. “The combination of Soitec’s SmartSiC™ substrates with Diodes.Inc industry-leading devices can be a great combination for automotive and industry Power Devices markets.”

SmartSiC™ is a proprietary Soitec technology which allows to obtain, thanks to Soitec proprietary SmartCut™ technology, a thin layer of a high-quality single crystal SiC “donor” wafer, and bond it on top of a low resistivity “handle” polySiC wafer. The engineered substrate then improves device performance and reliability. The prime quality SiC “donor” wafer can be reused multiple times, significantly reducing the overall environmental footprint required to produce SiC wafers.

Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor's Smallcap 600 and Russell 3000 Index company, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets, and Soitec (Euronext Paris), a leader in designing and manufacturing innovative semiconductor materials, shared the validation of Soitec’s 150mm SmartSiCTM substrates for Diodes’ SiC Schottky 650V diodes, in addition to the improvements provided to the  on-resistance of 1200V VDMOSFET devices as presented at ICSCRM 2025.

The design-of-experiments clearly demonstrated the advantages of SmartSiCTM engineered wafers to lower the on-resistance of Silicon Carbide (SiC) Power Devices. The packaged parts from the assembled engineered wafers have now passed the initial robustness verification, allowing the SiC foundry Clas-SiC Wafer Fab Limited to offer SmartSiC™ as a substrate option in their 1200V MOSFET Process Design Kit.

“Our cutting-edge SmartSiC™ technology is an innovative technology for the increasing market demand for SiC Power Devices enabling systems with better efficiency and higher power density” said Christophe Maleville, CTO of Soitec. “The combination of Soitec’s SmartSiC™ substrates with Diodes.Inc industry-leading devices can be a great combination for automotive and industry Power Devices markets.”

SmartSiC™ is a proprietary Soitec technology which allows to obtain, thanks to Soitec proprietary SmartCut™ technology, a thin layer of a high-quality single crystal SiC “donor” wafer, and bond it on top of a low resistivity “handle” polySiC wafer. The engineered substrate then improves device performance and reliability. The prime quality SiC “donor” wafer can be reused multiple times, significantly reducing the overall environmental footprint required to produce SiC wafers.